SEOUL, South Korea / RankWire.AI / – Samsung Electronics has introduced innovative strategies for memory and storage technology aimed at boosting artificial intelligence infrastructure performance. The company announced these plans at the 2026 OCP Global Summit in San Jose, California, held from October 12 to 15. Its roadmap emphasizes high-performance memory, memory expansion via Compute Express Link, and next-generation solid-state drives. Additionally, Samsung will collaborate with AMD on a joint CXL demonstration. These initiatives aim to resolve capacity limitations affecting current AI servers.
Samsung outlined its approach through three main objectives: increasing speed, enabling memory scalability, and ensuring data persistence. To improve speed, the company showcased customized high-bandwidth memory alongside the eighth-generation HBM5. For scalability, CXL technology was highlighted as a solution for adding capacity beyond existing server memory. To address data persistence, Samsung introduced next-generation SSD-based storage and management systems. The company also unveiled storage software designed to enhance data processing efficiency within AI frameworks.
According to Samsung, the increasing deployment of AI agents necessitates more memory during inference processes. Larger AI models generate more data as they respond, and this data must remain accessible to processors. Existing systems impose limits on how much memory each processor can access. Samsung presented CXL technology as an effective method to surpass these constraints. It also showcased key-value cache optimization, which allows AI models to reuse previously processed data instead of repeating computations.
Collaboration with AMD extends to CXL memory expansion solutions
Samsung and AMD will jointly demonstrate a CXL-based system designed to increase memory capacity in AI platforms. This technology enables processors to share memory resources rather than relying solely on local server memory. Samsung reports that engineers have validated this solution in real-world system environments. The demonstration builds on a memorandum of understanding signed in March 2026, focusing on next-generation AI memory and computing advancements. On October 7, AMD CEO Lisa Su visited Korea and met with Jeon Young-hyun, Vice Chairman of Samsung’s Device Solutions division.
Memory pooling was another feature highlighted during Samsung’s presentation. The company showcased CMM-D, a CXL-based DRAM module that links multiple memory units into a shared pool, allowing systems to draw capacity as needed. Samsung also displayed processing-in-memory technology, which performs certain calculations within memory chips to reduce data movement and conserve energy. Exhibits included 2-nanometer gate-all-around wafers, Groq LPU wafers, and Nvidia’s Groq 3 LPX system.
Samsung’s AI memory roadmap shaped by early co-design efforts
Shim Ho-jun, Vice President and head of Samsung’s Application Engineering Team, shared details of the company’s plans during an executive session. He emphasized that the growth of larger AI models and increased inference workloads make expanding memory capacity and bandwidth crucial for achieving optimal system performance. Shim also noted that Samsung is intensifying co-design and technical validation collaborations with global partners from the earliest stages of development. The goal is to better align memory and storage products with customer system designs.
Samsung MAX Lab provides a platform for clients to evaluate memory and storage solutions under real-world AI workloads. It also supports co-design tailored to specific system configurations. Customers can test pre-commercial technologies, including PIM and next-generation SSDs, before they are commercially available. Samsung participated in the summit as a Diamond Sponsor. This event follows its appearances in 2026 at Nvidia GTC, COMPUTEX, and the Future of Memory and Storage conference, as the company continues to expand its presence in the AI memory space.